Navitas launches ultra-high-voltage SiC power module boosting efficiency for energy and AI infrastructure.

Navitas Semiconductor introduced a new 2300 V, 8 mΩ full-bridge SiCPAK™ G power module using advanced GeneSiC™ Trench-Assisted Planar™ technology. This module improves efficiency and power density for applications like solid-state transformers, grid-scale battery storage, solar inverters, and EV megawatt charging, crucial for next-gen AI data centers and energy grids. It features enhanced heat management, high reliability testing beyond industry standards, and options for thermal interface materials and high-current pins. Samples are available immediately, supporting Navitas' expansion in ultra-high-voltage SiC technology for energy and AI infrastructure.

Navitas Semiconductor's stock price rose 4.12% to USD 9.10 as of Oct 21, 2026 19:43 WIB on Pluang, reflecting strong market interest following its launch of the advanced 2300 V SiCPAK™ G power module. The company holds a market cap of $2.29 billion and an enterprise value of $1.74 billion, with a trading volume of 8,463,660 shares. This price movement coincides with Navitas' push into ultra-high-voltage SiC technology for energy and AI infrastructure applications.