
Micron Technology has introduced a 256GB DDR5 registered DIMM using its advanced 1-gamma DRAM technology, achieving speeds up to 9,200 MT/s, which is over 40% faster than current modules. This module uses 3D stacking and through-silicon vias to enhance capacity, speed, and power efficiency, reducing power consumption by over 40% compared to two 128GB modules. It targets AI and high-performance computing data centers needing higher memory capacity and efficiency. Micron is currently sampling this module to server partners for validation and aims to accelerate production deployment for AI infrastructure scaling.